page 1 NPT2010 nds - 034 rev. 1, 052413 g a ll i u m n i tr i d e 4 8 v , 100 w , dc - 2.2 ghz hemt built using the sigantic ? process - a proprietary gan - on - silicon technology dc - 2.2 ghz 100w gan hemt s ym b ol p a r am e t e r min t y p m a x u n i t s g ss sm al l - sig nal g ain - 17 - db p sat s a t u r a t e d o u tp ut p o w e r - 50.5 - d bm ? sat efficiency at s a t u r a t e d o u tp ut p o w e r - 64 - % g p g ain at p out = 95w 13.5 15 - db ? drain e f f i c ie n c y at p out = 95w 52.5 61 - % v ds drain voltage - 48 - v ? ruggedness: output mismatch, all phase angles vswr = 10:1, no device damage rf s p ec i fi c a t ion s ( c w , 2.15 gh z ) : v ds = 4 8 v , i d q = 600 m a , t c = 2 5 c product description the NPT2010 gan hemt is a wideband transistor optimized for dc - 2.2 ghz operation. this device has been designed for cw, pulsed, and linear operation with output power levels to 100w (50 dbm) in an industry standard metal - ceramic package with a bolt down flange. f eatures ? suitable for linear and saturated applications ? tunable f r o m dc - 2.2 g hz ? 48v operation ? industry standard package ? high drain efficiency (>60%) applications ? defense communications ? land mobile radio ? avionics ? wireless infrastructure ? ism applications ? vhf/uhf/l - band radar
page 2 NPT2010 nds - 034 rev. 1, 052413 s ym b ol p a r am e t e r min t y p m a x u n i t s off characteristics i dlk drain - source leakage current (v gs = - 8v, v ds =160v) - - 24 ma i glk gate - source leakage current (v gs = - 8v, v ds =0v) - - 12 ma on characteristics v t gate threshold voltage (v ds =48v, i d =24ma) - 2.5 - 1.5 - 0.5 v v gsq gate quiescent voltage (v ds =48v, i d =600ma) - 2.1 - 1.2 - 0.3 v r on on resistance (v ds =2v, i d =180ma) - 0.2 - ? i d, max maximum drain current (v ds =7v pulsed, 300s pulse width, 0.2% duty cycle) - 14 - a dc s p ec i fi c a t ion s : t c = 2 5 c thermal resistance specification: symbol parameter t yp units r ? jc the r m al r esi s t an c e ( j un c tio n - t o - case ) , t j = 20 0 c 1.75 c / w ab s ol ut e m a xi m u m r a t in g s : n ot s imul t a neo us, t c = 2 5 c un le s s o the r wis e n o t e d symbol parameter max units v ds d r ai n - so u r c e v o l t a g e 1 6 0 v v g s g a t e - so u r c e v o l t ag e - 1 0 to 3 v i g g a t e cu r re n t 48 ma p t t o t a l d e vi c e p o w e r d i s s ipa tio n ( d er a t e d a b ov e 2 5 c ) 114 w t s tg s t or a g e t emper a t u r e r a ng e - 6 5 to 1 5 0 c t j o per a t i n g j un c tio n t emper a t u r e 2 2 5 c hbm human body model esd rating (per jesd22 - a114) class 1a junction temperature (t j ) measured using ir microscopy, case temperature (t c ) measured using a thermocouple embedded in heatsink.
page 3 NPT2010 nds - 034 rev. 1, 052413 frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 500 1.1 + j0.8 5.9 + j2.0 144 26.1 66.8 900 1.3 - j1.7 5.7 + j3.2 125 21.9 71.4 2200 2.0 - j6.5 2.7 - j1.9 115 16.6 66.6 optimum source and load impedances: (cw drain efficiency and output power tradeoff impedance) figure 1: cw power/drain efficiency tradeoff impedances, z o =10 ? load - pull data, reference plane at device leads v ds =48v, i dq =600ma, t c =25 ? c unless otherwise noted figure 2: gain vs. p out figure 3: efficiency vs. p out
page 4 NPT2010 nds - 034 rev. 1, 052413 2.15 ghz narrowband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 4: component placement of 2.15 ghz narrowband circuit for NPT2010 reference value manufacturer part number c1, c5 1uf avx 1210c105kat2a c2, c6 0.1uf kemet c1206c104k1ractu c3, c7 0.01uf avx 1206c103kat2a c4, c8 1000pf kemet c0805c102k1ractu c9 240pf atc atc600f241b c10 10pf atc atc800b100b c11 1pf atc atc800b1r0b c12 0.8pf atc atc600f0r8b c13 0.9pf atc atc600f0r9b c14 10pf atc atc600f100b c15 1.5pf atc atc800b1r5b c16 15pf atc atc800b150b l1 12.5nh coilcraft a04tjl l2 19.4nh coilcraft 0806sq - 19njl l3 8.0nh coilcraft a03tjl r1 15? panasonic erj - 2rkf15r0x pcb ro4350, ? r =3.5, 0.020 rogers nitronex nbd - 139r1
page 5 NPT2010 nds - 034 rev. 1, 052413 typical performance in 2.15 ghz narrowband circuit (cw, v ds =48v, i dq =600ma, f=2.15ghz, t c =25 ? c, unless otherwise noted) figure 6: gain vs. p out figure 8: quiescent v gs vs. temperature figure 9: power de - rating curve (t j = 225c, t c > 25c) figure 5. electrical schematic of 2.15 ghz narrowband circuit for NPT2010 (for rf tuning details see component placement diagram figure 4) figure 7: drain efficiency vs. p out
page 6 NPT2010 nds - 034 rev. 1, 052413 typical performance in 2.15 ghz narrowband circuit (cw, v ds =48v, i dq =600ma, f=2.15ghz, t c =25 ? c, unless otherwise noted) figure 10: 2 - tone imd3 vs. p out vs. i dq (1mhz tone spacing) figure 12: 2 - tone imd vs. p out (1mhz tone spacing) figure 11: 2 - tone gain vs. p out vs. i dq (1mhz tone spacing)
page 7 NPT2010 nds - 034 rev. 1, 052413 100 - 700 mhz broadband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 13: component placement of 100 - 700 mhz broadband circuit for NPT2010 reference value manufacturer part number c1 150uf nichicon upw1c151med c2, c7 1uf avx 1210c105kat2a c3, c6 0.1uf kemet c1206c104k1ractu c4, c5 0.01uf avx 12061c103kat2a c8 270uf united chemi - con elxy 630ell271mk25s c9 18pf atc atc100b180 c10, c19 2.4pf atc atc100b2r4 c11 5.6pf atc atc100b5r6 c12 15pf atc atc100b150 c13 220pf atc 600f221ft c14 12pf atc 600f120ft c15, c16 82pf atc atc100b820 c17 4.7pf atc atc100b4r7 c18 2pf atc atc100b2r0 r1 49.9? panasonic erj - 6enf49r9v r2 0.33? panasonic erj - 6rqfr33v r3, r4 24.9? panasonic erj - 1tnf24r9u f1 material 73 fair - rite 2673000801 f2, f3 4:1 transformer anaren xmt031b5012 l1 1.8h coilcraft 0805ls - 182xjlc l2 ~50nh 16 awg cu wire 5 turn, 0.2"id l3 5nh coilcraft a02tjl l4, l5 8nh coilcraft a03tjl pcb ro4350, er=3.5, 0.020 rogers nitronex nbd - 120r1
page 8 NPT2010 nds - 034 rev. 1, 052413 typical performance in 100 - 700 mhz broadband circuit (cw, v ds =48v, i dq =600ma, t c =25 ? c, unless otherwise noted) figure 14. electrical schematic of 100 - 700 mhz broadband circuit for NPT2010 (for rf tuning details see component placement diagram figure 13) figure 15: performance vs. frequency (p out = p sat ) figure 16: performance vs. frequency (p out = 49dbm) figure 17: gain/drain efficiency vs. p out (f = 500mhz) figure 18: small signal s - parameters vs. frequency
page 9 NPT2010 nds - 034 rev. 1, 052413 f igur e 19 - ac360b - 2 metal - ceramic package dimensions (all dimensions in inches [millimeters]) function gate rf input drain rf output (cut lead) source ground (flange)
page 10 NPT2010 nds - 034 rev. 1, 052413 n i t r o n e x, llc 2 30 5 p reside n tia l d r i ve d u r h am, n c 2 7 7 0 3 us a + 1 . 9 1 9 . 8 0 7 . 9 1 0 0 ( t elephon e ) + 1 . 9 1 9 . 8 0 7 .92 0 0 ( f a x ) inf o @ ni t ron e x . c o m ww w .ni t ron e x . c om a d d i t iona l i n f o r ma t io n t h i s pa r t i s l ea d - f r e e an d i s c o m p l ian t wi t h th e r o h s dire ct i v e ( r e s tr i ct ion s o n th e use o f ce r t ai n h a z a r d o u s s u b s t an ce s i n e l e ctr i c a l an d e l e ct r oni c e q u i pm en t ). i m po r t an t no t i c e n i t ron e x, llc rese r v e s th e r ig h t to m a k e c o r re c tio ns, m o d i f i c a tio ns, e nhan c eme n t s, i mpr ov eme n t s a n d o the r c h a nge s to i t s pr o du ct s a n d se r vi c e s at a n y t i m e a n d to d is c o n t in u e a n y pr o du c t o r se r vi c e w i tho ut n o ti c e . cust ome r s s ho u l d o b t ain t h e la t e st rel ev a n t inf o r m a tio n b e f or e p la c i n g orde r s a n d s ho u l d v e r i f y t hat su c h inf o r m a tio n i s c u r re n t a n d c ompl et e . a ll pr o du ct s a r e sol d su bje c t to n i tron e x t e r m s a n d c on di tio ns of s a l e su pp l ie d at th e t i m e of orde r a ck n o w ledgme n t . th e la t e st inf o r m a t i o n f ro m n i tron e x c an b e f o u n d e i the r b y c a lli n g n i tron e x at 1 - 9 1 9 - 8 0 7 - 9 1 0 0 o r vis i t i n g o ur w ebs i t e at ww w .ni t ron e x . c o m. n i t ron e x w a r r a n t s pe r f o r m an c e of i t s pa c k age d semi c on du c t o r o r d i e to th e s pe c i f i c a tio ns a pp l i c a bl e at th e t i m e of sal e in a c c or dan c e w i t h n i tron e x s t a n da r d w a r r a n t y . t e s t i n g a n d o the r quali t y c o n tro l t e c hn i q ue s a r e u se d to th e e x t e n t n i t ron e x deem s ne c e s s a r y to su p- po r t th e w a r r a n t y . e x c e p t wher e m a n da t e d b y g ov e r n me n t re qu ireme n t s, t e s t i n g of all pa r a m et e r s of e a c h pr o du c t i s n ot ne c e s sa r i ly pe r f o r me d . n i t ron e x a s su me s n o l i a bi li t y f o r a pp l i c a tio ns a s si s t an c e o r c ust ome r pr o du c t desig n . cust ome r s a r e re s po n s i bl e f o r t hei r pr o du c t a n d a pp l i c a tio ns u s i n g n i tron e x semi c on du c t o r pr o du ct s o r se r vi c e s. t o m ini m i z e th e r i s k s a s so c i a t e d w i t h c ust ome r pr o du ct s a n d a pp l i c a- tio ns, c ust ome r s s ho u l d pr o vid e a de qua t e desig n a n d oper a t i n g s af eg u ar ds. n i t ron e x d o e s n ot w a r r a n t o r represe n t t hat a n y l i c e n s e , e i the r e xpre s s o r i mp l ie d , i s gr a nt e d u nde r a n y n i tron e x pa t e n t r ig h t , c o p y r ig h t , m ask w o r k r ig h t , o r o the r n i tron e x i nt e l le c tual prope r t y r ig h t re la t i n g to a n y c omb ina tio n , m a c hi n e o r pr o c e s s in w h i c h n i t ron e x pr o du ct s o r se r vi c e s a r e u se d . r epr o du c t i o n of inf o r m a tio n in n i tron e x da t a s he e t s i s pe r m i t t e d i f a n d o nly i f s a i d repr o du c tio n doe s n ot al t e r a n y of th e inf o r m a t i o n a n d i s a c c om pan ie d b y all a s s o c i a t e d w a r r a n tie s, c on di tio ns, li m i t a tio ns a n d n o ti c e s. a n y al t er a tio n of th e c o n t ai ne d inf o r m a tio n i nv al i da t e s all w a r r a n tie s a n d n i tron e x i s n ot re s po n s i bl e o r l i a bl e f o r a n y su c h s t a t eme n t s. n i t ron e x pr o du ct s a r e n ot i nt ende d o r au tho r i z e d f o r u s e in l i fe su ppo r t s ys t em s, in c l u di n g but n ot li m i t e d to su r g i c al i mp la n t s i n to t h e b o dy o r a n y o the r a pp l i c a tio n i nt ende d to su ppo r t o r sus t ain l i f e . sho u l d b u y e r p u r c ha s e o r u s e n i t ron e x, llc pr o du ct s f o r a n y su c h uni nt ende d o r unau tho r i z e d a pp l i c a tio n , b u y e r sh a ll i ndem n i f y a n d hol d n i tron e x, llc, i t s o f f i c e r s, empl oy ee s, su bsi d i a r ie s, a f f i l i a t e s, d i s t r ibut o r s, a n d i t s su cc e s so r s h a r mle s s a g ainst all c lai m s, c o s t s, da m a ge s, a n d e xpe n se s, a n d re a so na bl e a t t o r n e y f ee s a r is i n g o ut o f , d ire ct ly o r i n d ire ct l y , a n y c laim of pe r so nal inju r y o r de a t h a s so c i a t e d w i t h su c h uni nt ende d o r unau tho r i z e d u s e , n o t w i t hs t a n di n g i f su c h c laim al lege s t hat n i t ron e x w as neg l ige n t reg a r di n g th e desig n o r m an uf a c tu r e of s a i d pr o du ct s. n i t ron e x a n d t h e n i tron e x l o g o a r e re g i s t ere d tr a dema r k s of n i tron e x, llc . a ll o t he r pr o du c t o r se r vi c e na me s a r e th e prope r t y of thei r re s pe c ti v e o wne r s. ? n i t ron e x, llc 2 0 13 a ll r ig h t s rese r v e d .
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